Skip to main content
Log in
Infineon Technologies SI4435DYTRPBF — Discrete Semiconductors

SI4435DYTRPBF P-Channel MOSFET, 30V 8A 20mOhm, 8-SOIC

MPNSI4435DYTRPBF
Active

Infineon IR HEXFET® series SI4435DYTRPBF, P-Channel MOSFET, 30 V Vdss, 8 A continuous drain, 20 mOhm Rds(on) at 10 V, 60 nC gate charge, -55 to 150 °C, 8-SOIC surface mount.

$0.9900Ref. price · indicative, final on quote
Infineon Technologies SI4435DYTRPBF datasheet (PDF)
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SI4435DYTRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2320 pF @ 15 V

Product details

P-channel load switch for 24 V rails

The SI4435DYTRPBF: The 8-SO package fits standard surface-mount assembly lines.

Rds(on) and gate drive — what the numbers mean

Rds(on) is specified at 20 mOhm max with 8 A drain current and 10 V gate drive. Gate charge is 60 nC at 10 V. Input capacitance Ciss is 2320 pF at 15 V drain bias.

Power dissipation is limited to 2.5 W at 25 °C ambient in the 8-SO package — a copper pour on the PCB landing pad is recommended to keep the junction below the derated limit at high load currents.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of the SI4435DYTRPBF?

The maximum Rds(on) is 20 mOhm at 8 A drain current with 10 V gate drive.

Is the SI4435DYTRPBF lead-free?

Yes, the part is ROHS3 compliant.