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SI4435DYTRPBF

Infineon Technologies · HEXFET® Series

Infineon IR HEXFET® series SI4435DYTRPBF, P-Channel MOSFET, 30 V Vdss, 8 A continuous drain, 20 mOhm Rds(on) at 10 V, 60 nC gate charge, -55 to 150 °C, 8-SOIC surface mount.

Infineon Technologies SI4435DYTRPBF
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

SI4435DYTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2320 pF @ 15 V

Technical details

P-channel load switch for 24 V rails

The SI4435DYTRPBF: The 8-SO package fits standard surface-mount assembly lines.

Rds(on) and gate drive — what the numbers mean

Rds(on) is specified at 20 mOhm max with 8 A drain current and 10 V gate drive. Gate charge is 60 nC at 10 V. Input capacitance Ciss is 2320 pF at 15 V drain bias.

Power dissipation is limited to 2.5 W at 25 °C ambient in the 8-SO package — a copper pour on the PCB landing pad is recommended to keep the junction below the derated limit at high load currents.

It is ROHS3 compliant.

SI4435DYTRPBF
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