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Infineon Technologies S29GL128S10TFIV10 — Discrete Semiconductors

Infineon S29GL128S10TFIV10 GL-S NOR Flash, 128 Mbit, 100 ns

MPNS29GL128S10TFIV10
End of Life

Infineon Technologies GL-S series parallel NOR flash, S29GL128S10TFIV10, 128 Mbit (8M x 16), 100 ns access time, 1.65-3.6 V supply, -40 to 85°C industrial, 56-TSOP tray.

$5.47Ref. price · indicative, final on quote
Packaging56-TFSOP (0.724", 18.40mm Width)
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

S29GL128S10TFIV10 Technical Specifications
ParameterValue
SeriesGL-S
Memory typeNon-Volatile
Mounting typeSurface Mount
Voltage1.65V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologyFLASH - NOR
Access time100 ns
Memory size128Mbit
Memory formatFLASH
Case56-TFSOP (0.724\", 18.40mm Width)
Memory organization8M x 16
Write cycle time - word, page60ns

Product details

128 Mbit parallel NOR flash in 56-TSOP

The S29GL128S10TFIV10 is a 128 Mbit parallel NOR flash from Infineon's GL-S family, organized as 8M x 16 bits. The 100 ns random access time sets the bus timing window for the host memory controller — the read cycle must accommodate this ceiling for reliable code execution. NOR flash is the standard for code-shadowing and execute-in-place (XIP) in embedded systems. The parallel interface delivers sustained read throughput without the command overhead of serial flash, suiting it for boot firmware, FPGA configuration storage, and real-time code execution where deterministic access latency matters.

Supply and temperature envelope

The 100 ns access time is specified at the minimum VCC; at higher supply voltages the internal timing margins improve. The 60 ns word/page write cycle time means programming a full 256 KB sector takes roughly 2.6 seconds at the page write rate — budget this into the firmware update window.

Package and board-fit constraints

Housed in a 56-TFSOP (0.724" body width, 18.40 mm) supplied as a 56-TSOP, the package footprint is standard for parallel NOR flash in this density class. The 0.50 mm pin pitch demands a controlled-impedance layout if the bus runs above 40 MHz — the 100 ns access time corresponds to a 10 MHz read cycle, so signal-integrity margins are generous for most designs. Store the reels in a dry cabinet below 10% RH if the seal is opened.

Lifecycle and compliance status

ROHS3 compliant (EU 2015/863), with no restricted substances including the four phthalates.

Frequently asked questions

What is the memory organization and access time of S29GL128S10TFIV10?

128 Mbit organized as 8M x 16 bits, with a 100 ns random access time. The write cycle time is 60 ns per word or page.

What package is S29GL128S10TFIV10 available in?

56-TFSOP (0.724" body width, 18.40 mm) supplied as 56-TSOP, surface-mount, tray packaging.

What compliance documentation does Infineon provide for S29GL128S10TFIV10?

ROHS3 compliant.