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Infineon Technologies S25FL512SAGBHM210 — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon S25FL512SAGBHM210 512Mbit NOR Flash, 133 MHz

MPNS25FL512SAGBHM210
Active

Infineon Technologies FL-S series, Automotive AEC-Q100 NOR Flash, 512Mbit, SPI Quad I/O, 133 MHz, 2.7-3.6 V, -40 to +125°C, 24-TBGA, Tray.

$10.2767Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

S25FL512SAGBHM210 specifications
ParameterValue
SeriesAutomotive, AEC-Q100, FL-S
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency133 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C ~ 125°C (TA)
PackageTray
TechnologyFLASH - NOR
Memory size512Mbit
Memory formatFLASH
Case24-TBGA
Memory organization64M x 8

Product details

512 Mbit NOR Flash for automotive and industrial code storage

The Infineon S25FL512SAGBHM210 is a 512 Mbit SPI NOR Flash from the FL-S series, qualified to AEC-Q100 Grade 1. Organised as 64M x 8 bits, it communicates over a SPI Quad I/O interface at up to 133 MHz clock frequency. The quad-I/O read mode delivers the throughput needed for XiP (eXecute-in-Place) code shadowing, reducing the need for a separate DRAM buffer in cost-sensitive automotive ECUs.

Supplied in a 24-ball TBGA package (24-BGA, 8x6 mm body). The wide tolerance allows the part to ride through load-dump transients without an external clamp, provided the rail stays within the abs-max rating.

Frequently asked questions

Is S25FL512SAGBHM210 available via RFQ confirmation and what is the lead time for an order?

Submit an RFQ for a real-time stock check and lead time estimate through our sourcing desk.