Infineon Technologies FL-S series, Automotive AEC-Q100 NOR Flash, S25FL512SAGBHB210, 512Mbit, Quad SPI, 133 MHz, 2.7-3.6 V, -40 to 105 °C, 24-TBGA.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q100, FL-S |
| Memory type | Non-Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.7V ~ 3.6V |
| Clock frequency | 133 MHz |
| Memory interface | SPI - Quad I/O |
| Operating temperature | -40°C ~ 105°C (TA) |
| Package | Tray |
| Technology | FLASH - NOR |
| Memory size | 512Mbit |
| Memory format | FLASH |
| Case | 24-TBGA |
| Memory organization | 64M x 8 |
The S25FL512SAGBHB210 is a 512 Mbit NOR Flash from Infineon's FL-S series, organized as 64M x 8 and accessed through a Quad SPI interface clocked at 133 MHz.
Supplied in a 24-ball TBGA package (8x6 mm body), surface-mount only. The fine-pitch BGA footprint requires a controlled solder profile and X-ray inspection post-reflow. The device is non-volatile, organized as 64M x 8 bits.
The W25Q512 is a pin-compatible 512 Mbit Quad SPI NOR flash, but the JEDEC ID, SFDP table, and status-register command map differ from the S25FL512S — a bootloader written against the Infineon device's read-id, read-SFDP, and erase commands will not operate correctly on the Winbond die without firmware validation. The erase-sector architecture also differs between vendors at this density.