Skip to main content
Infineon Technologies IRLML6244TRPBF

IRLML6244TRPBF N-Channel MOSFET, 20V, 6.3A, SOT-23

MPNIRLML6244TRPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRLML6244TRPBF, 20 V drain-source, 6.3 A continuous drain, 21 mOhm Rds(on) at 4.5 V, SOT-23 package, -55 to 150 °C.

$0.44Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLML6244TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C6.3A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.1V @ 10µA
Rds on (Max) @ id, vgs21mOhm @ 6.3A, 4.5V
Gate charge (Qg) (Max) @ vgs8.9 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 16 V

Product details

Logic-level switch in a SOT-23 — what it can and cannot do

The 1.3 W power dissipation at ambient temperature (Ta) is the real thermal ceiling. At 6.3 A the conduction loss alone (I²R) hits 0.83 W, leaving little headroom for switching losses or elevated ambient. For any continuous load above 4 A, plan on a copper pour under the SOT-23 pad to pull heat into the board.

Gate drive thresholds — what 1.8 V logic means

The drive voltage range is specified from 2.5 V (minimum for rated Rds(on)) up to 4.5 V (maximum Rds(on) condition). The maximum gate threshold is 1.1 V at 10 µA drain current, which means the FET starts turning on well below 2.5 V — but at 1.8 V gate drive the on-resistance will be significantly higher than the 21 mOhm at 4.5 V. For a 1.8 V logic rail, expect several hundred milliohms and derate the current accordingly. Gate charge is 8.9 nC at 4.5 V, and input capacitance is 700 pF at 16 V drain-source. These are low enough that a GPIO pin can drive the gate directly at moderate switching frequencies (tens of kHz). Above 100 kHz the gate drive current from the logic output becomes a limiting factor.

Frequently asked questions

What is the Rds(on) of IRLML6244TRPBF at 4.5V?

Maximum on-resistance is 21 mOhm at 4.5 V gate drive with 6.3 A drain current. This is the rated condition for full conduction.

Can IRLML6244TRPBF be driven with 1.8V gate voltage?

The gate threshold is 1.1 V max at 10 µA, so the FET will begin conducting at 1.8 V. However, the specified drive voltage for rated Rds(on) starts at 2.5 V. At 1.8 V the on-resistance will be substantially higher — expect several hundred milliohms — and the current capability must be derated accordingly.