Infineon HEXFET series, IRLML5103TRPBF, P-Channel MOSFET, 30 V Vdss, 760 mA Id, 600 mOhm Rds(on) at 10 V, SOT-23-3 package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 760mA (Ta) |
| Power dissipation | 540mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 600mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.1 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 75 pF @ 25 V |
It comes in a SOT-23-3 package, making it a compact choice for low-side or high-side switching in sub-24 V rails where board space is tight.
At the rated 760 mA, expect conduction losses around 350 mW — within the 540 mW power dissipation limit in free air, but leaving little margin for elevated ambient temperatures. The threshold voltage is 1 V max at 250 µA, meaning 3.3 V logic can fully enhance the channel.
Yes. As a P-channel MOSFET, it can be used as a high-side switch (source connected to the positive rail) or as a low-side switch with appropriate gate drive. The 1 V max threshold makes it compatible with 3.3 V logic.