ICBOMS
RFQ

IRLML2803TRPBF

Infineon Technologies · HEXFET® Series

IRLML2803TRPBF, HEXFET® series N-channel MOSFET, 30 V drain-source, 1.2 A continuous drain, 250 mOhm Rds(on) max at 10 V, logic-level gate, SOT-23 surface-mount package.

Infineon Technologies IRLML2803TRPBF
 Download datasheet (PDF)
[IN STOCK] In Stock: 34,875 pcs
$0.17/ pc

Volume pricing

Buy Now

Subtotal:$0.85
Inquire on WhatsApp Upload full BOM

MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

IRLML2803TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.2A (Ta)
Power dissipation540mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 910mA, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds85 pF @ 25 V

Technical details

30 V, 1.2 A N-channel in SOT-23 — logic-level gate, low gate charge

The drive voltage range for achieving rated Rds(on) is 4.5 V to 10 V; at 3.3 V gate drive the on-resistance will be higher than the 250 mOhm max specified at 10 V.

SOT-23 footprint, 540 mW dissipation, -55 to 150 °C junction

Supplied in the Micro3™/SOT-23 package (TO-236-3 / SC-59 / SOT-23-3), surface-mount only — the 540 mW power dissipation at 25 °C ambient is the thermal budget for the small footprint.

The part is ROHS3 compliant.

IRLML2803TRPBF
[ALLOC] verified
Quote
Parts A–Z