Dual N-channel in a 2x2 PQFN — what the specs mean for the power stage
The Infineon IRLHS6376TRPBF is a dual N-channel MOSFET from the HEXFET series, packing two 30V, 3.6A rated switches into a single 6-PQFN Dual (2x2) package. The logic-level gate threshold — 1.1V max at 10µA — means a 3.3V or 4.5V rail fully enhances both channels, so no extra gate-drive supply is needed in low-voltage designs.
63 mOhm at 4.5 V — conduction loss and switching overhead
Each channel's on-resistance is 63 mOhm max at 3.4A drain current with a 4.5V gate drive. At 3.6A continuous drain, the per-channel conduction loss sits at roughly 0.8W — within the 1.5W package power limit, but the dual-channel layout means the total thermal load shares the same small pad. The 2.8 nC gate charge at 4.5V keeps switching losses low in a 500 kHz to 1 MHz DC-DC converter, and the 270 pF input capacitance at 25V drain-source gives the driver a light capacitive load.