11.7 mOhm at logic-level gate drive
The on-resistance is specified at 11.7 mOhm max with a 4.5 V gate drive, and it can be driven from a 2.5 V logic rail — the minimum drive voltage for the rated Rds(on).
2x2 mm PQFN — thermal budget is the constraint
The 6-PowerVDFN package measures 2x2 mm (supplier device code 6-PQFN). In a dense layout with limited ground-plane area, the effective dissipation drops below 1 W — budget the load current and ambient temperature against the 150 °C junction maximum. Gate charge is 14 nC at 4.5 V, and input capacitance is 1110 pF at 10 V drain-source. At a 500 kHz switching frequency the gate-drive power is about 31 mW — well within a standard driver's capability, but the switching loss in the FET itself depends on the drain current and the rise/fall times set by the gate resistance.
It is ROHS3 compliant.