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Infineon Technologies IRLHM630TRPBF

IRLHM630TRPBF N-Channel MOSFET, 30V, 40A, 3.5mOhm PQFN

MPNIRLHM630TRPBF
End of Life

IRLHM630TRPBF, Infineon HEXFET® series, N-Channel MOSFET, 30V Vdss, 21A (Ta) / 40A (Tc) continuous drain, 3.5mOhm Rds(on) at 4.5V, PQFN 3x3 package, -55°C to 150°C junction temperature.

$1.15Ref. price · indicative, final on quote
Packaging8-VQFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLHM630TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta), 40A (Tc)
Power dissipation2.7W (Ta), 37W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-VQFN Exposed Pad
Vgs(th) (Max) @ id1.1V @ 50µA
Rds on (Max) @ id, vgs3.5mOhm @ 20A, 4.5V
Gate charge (Qg) (Max) @ vgs62 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3170 pF @ 25 V

Product details

Temperature grade and environment

Junction temperature range of -55°C to 150°C covers industrial and automotive under-hood environments. The 3170 pF input capacitance at 25 V drain bias is moderate — the gate drive loop should be kept tight to avoid ringing, especially in high-side configurations.

Sourcing and lifecycle

The IRLHM630TRPBF carries an Active lifecycle status and is ROHS3 compliant. No last-time-buy or obsolescence risk on the horizon. There is no official second source or successor listed in the Infineon HEXFET® line — plan for single-sourced BOM coverage and qualify stock buffers accordingly.

Frequently asked questions

What is the Rds(on) of the IRLHM630TRPBF?

Maximum on-resistance is 3.5 mOhm at 20 A drain current with 4.5 V gate drive. It also specifies drive voltage down to 2.5 V for reduced Rds(on) operation.

What is the replacement for IRLHM630TRPBF?

Infineon does not list a direct replacement or successor for this active part. No pin-compatible alternative is documented in the HEXFET® family for this specific package and rating combination.

Is IRLHM630TRPBF lead-free?

Yes, the IRLHM630TRPBF is ROHS3 compliant, which restricts lead and other hazardous substances.