Infineon HEXFET® series, IRLHM620TRPBF, N-Channel MOSFET, 20 V Vdss, 2.5 mOhm Rds(on) at 4.5 V, 26 A (Ta) / 40 A (Tc) Id, PQFN (3x3) package, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 26A (Ta), 40A (Tc) |
| Power dissipation | 2.7W (Ta), 37W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.1V @ 50µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 20A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 78 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3620 pF @ 10 V |
The Infineon IRLHM620TRPBF is an N-Channel MOSFET from the HEXFET® series, rated for 20 V drain-to-source voltage and a continuous drain current of 26 A at 25 °C ambient (40 A at case temperature).
Total gate charge Qg is 78 nC at 4.5 V. The 3620 pF input capacitance at 10 V drain bias sets the Miller plateau timing.
ROHS3 compliant.
2.5 mOhm maximum at 20 A drain current and 4.5 V gate drive.
78 nC maximum at 4.5 V gate voltage.
Yes, ROHS3 compliant.