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Infineon Technologies IRFSL7730PBF — Discrete Semiconductors

IRFSL7730PBF N-Channel MOSFET, 75 V, 195 A, 2.6 mOhm

MPNIRFSL7730PBF
Active

IRFSL7730PBF, HEXFET, StrongIRFET, N-Channel Power MOSFET, 75 V, 195 A switching current, 2.6 mOhm Rds(on) at 100 A, 407 nC gate charge, Through Hole, Bulk.

$1.71Ref. price · indicative, final on quote
Infineon Technologies IRFSL7730PBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRFSL7730PBF specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power375.0
Package_typeBulk
Capacitance_uf0.0137
StatusActive
Supply voltage75.0
Vgs(Th) (Max) @ id3.7 V @ 250µA
Switching current195.0
Rds on (Max) @ id, vgs2.6mOhm @ 100 A, 10 V
Gate charge (Qg) (Max) @ vgs407 nC @ 10 V

Product details

Total gate charge is 407 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 40.7 mA — well within the capability of a standard driver IC, but the peak current during the Miller plateau requires a driver with at least 2 A peak output to keep switching times under 100 ns.

Thermal and package reality for the BOM

The through-hole package (Bulk) requires a copper pad or heatsink on the tab — the 175°C Tj max means the thermal interface material and mounting torque must be specified for the full temperature swing.

Frequently asked questions

What is the difference between IRFSL7730 and IRFSL7730PBF?

The IRFSL7730PBF suffix indicates lead-free (PbF) plating on the terminals. The electrical specifications — 75 V, 195 A, 2.6 mOhm Rds(on), 407 nC gate charge — are identical between the two ordering codes.