Infineon Technologies IRFS Discrete Semiconductors Series

3 variants · Infineon TechnologiesAll Discrete Semiconductors →

About the Infineon Technologies IRFS Discrete Semiconductors Series

The Infineon Technologies IRFS Discrete Semiconductors Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common FET type of N-Channel, operating temperature high of -55°C to 175°C(TJ) and package_type of Bulk. Variants differ by capacitance_uf, gate charge (Qg) (Max) @ vgs and mounting, so you can match the exact capacitance_uf your application requires using the selection guide below. All listed Infineon Technologies IRFS Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Capacitance_uf: 0.0101 · 0.0137 · 0.0142
Gate charge (Qg) (Max) @ vgs: 270 nC @ 10 V · 407 nC @ 10 V · 460 nC @ 10 V
Mounting: Surface Mount · Through Hole
Power: 290.0 · 375.0
Rds on (Max) @ id, vgs: 1.2mOhm @ 100 A, 10 V · 2.6mOhm @ 100 A, 10 V · 3.5mOhm @ 100 A, 10 V
Supply voltage: 40.0 · 75.0
Switching current: 183.0 · 195.0
Vgs(Th) (Max) @ id: 3.7 V @ 250µA · 3.9 V @ 250µA

Shared specifications

FET type: N-Channel
Operating temperature high: -55°C to 175°C(TJ)
Package_type: Bulk
Vgs: ±20 V

Variant comparison

Parameter	IRFSL7430PBF	IRFSL7734PBF	IRFSL7730PBF
Capacitance_uf	0.0142	0.0101	0.0137
Gate charge (Qg) (Max) @ vgs	460 nC @ 10 V	270 nC @ 10 V	407 nC @ 10 V
Mounting	Surface Mount	Through Hole	Through Hole
Power	375.0	290.0	375.0
Rds on (Max) @ id, vgs	1.2mOhm @ 100 A, 10 V	3.5mOhm @ 100 A, 10 V	2.6mOhm @ 100 A, 10 V
Supply voltage	40.0	75.0	75.0
Switching current	195.0	183.0	195.0
Vgs(Th) (Max) @ id	3.9 V @ 250µA	3.7 V @ 250µA	3.7 V @ 250µA

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