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Infineon Technologies IRFP4568PBF — Discrete Semiconductors

IRFP4568PBF HEXFET N-Channel MOSFET, 150 V, 171 A, TO-247

MPNIRFP4568PBF
Active

Infineon IRFP4568PBF HEXFET N-Channel MOSFET, 150 V Vdss, 171 A Id, 5.9 mOhm Rds(on) @ 103 A, 10 V, 227 nC Qg, TO-247-3 through hole, -55°C to 175°C.

$7.9700Ref. price · indicative, final on quote
Infineon Technologies IRFP4568PBF datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRFP4568PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C171A (Tc)
Power dissipation517W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs5.9mOhm @ 103A, 10V
Gate charge (Qg) (Max) @ vgs227 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10470 pF @ 50 V

Product details

Total gate charge is 227 nC at 10 V — a figure that directly sets the gate-driver current requirement. At 100 kHz switching, the average gate-drive current is 22.7 mA; the driver must source and sink that charge within the dead-time window to avoid shoot-through. Input capacitance Ciss is 10470 pF at 50 V drain-source. The Miller plateau region determines the switching transition time; pairing this FET with a driver capable of 2 A peak current keeps the turn-on and turn-off edges under 100 ns.

Thermal limits and package choice

Maximum junction temperature is 175°C, giving 25°C of headroom over the more common 150°C rating. The TO-247-3 (TO-247AC) through-hole package bolts directly to a heatsink with a single M3 screw, minimising junction-to-case thermal resistance.

It is ROHS3 compliant.

Frequently asked questions

What is the maximum junction temperature for IRFP4568PBF?

The maximum junction temperature is 175°C, allowing operation in higher-ambient or poorly ventilated enclosures compared to 150°C-rated MOSFETs.

Is IPD50R950CEAUMA1 a direct replacement for IRFP4568PBF?

No. The IPD50R950CEAUMA1 is a 500 V CoolMOS with 950 mOhm Rds(on) and 4.3 A current rating — a different voltage and current class. It is not a functional substitute for the 150 V, 171 A IRFP4568PBF.