IRFP260NPBF
Infineon Technologies
-55°C~175°C(TJ)TubeHEXFET®
Ref. price$4.2400
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Infineon Technologies IRFP Discrete Semiconductors Series
4 variants · Infineon Technologies
About the Infineon Technologies IRFP Discrete Semiconductors Series
The Infineon Technologies IRFP Discrete Semiconductors Series series groups 4 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-247-3, drive voltage (Max rds on, min rds on) of 10V and FET feature of -. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and gate charge (Qg) (Max) @ vgs, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed Infineon Technologies IRFP Discrete Semiconductors Series part numbers are active and orderable.
Select a variant by
- Current - continuous drain (Id) @ 25°C
- 50A (Tc) · 171A (Tc)
- Drain to source voltage
- 150 V · 200 V
- Gate charge (Qg) (Max) @ vgs
- 227 nC @ 10 V · 234 nC @ 10 V
- Input capacitance (Ciss) (Max) @ vds
- 4057 pF @ 25 V · 10470 pF @ 50 V
- Operating temperature
- -55°C ~ 175°C (TJ) · -55°C~175°C(TJ)
- Power dissipation
- 300W (Tc) · 517W (Tc)
- Rds on (Max) @ id, vgs
- 5.9mOhm @ 103A, 10V · 40mOhm @ 28A, 10V
- Vgs
- ±20V · ±30V
Shared specifications
- Case
- TO-247-3
- Drive voltage (Max rds on, min rds on)
- 10V
- FET feature
- -
- FET type
- N-Channel
- Mounting
- Through Hole
- Package
- Tube
- Technology
- MOSFET (Metal Oxide)
Variant comparison
| Parameter | IRFP260NPBF | IRFP260MPBF | IRFP4568PBF | IRFP4568PBFXKMA1 |
|---|---|---|---|---|
| Current - continuous drain (Id) @ 25°C | 50A (Tc) | 50A (Tc) | 171A (Tc) | 171A (Tc) |
| Drain to source voltage | 200 V | 200 V | 150 V | 150 V |
| Gate charge (Qg) (Max) @ vgs | 234 nC @ 10 V | 234 nC @ 10 V | 227 nC @ 10 V | 227 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4057 pF @ 25 V | 4057 pF @ 25 V | 10470 pF @ 50 V | 10470 pF @ 50 V |
| Operating temperature | -55°C~175°C(TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C~175°C(TJ) |
| Power dissipation | 300W (Tc) | 300W (Tc) | 517W (Tc) | 517W (Tc) |
| Rds on (Max) @ id, vgs | 40mOhm @ 28A, 10V | 40mOhm @ 28A, 10V | 5.9mOhm @ 103A, 10V | 5.9mOhm @ 103A, 10V |
| Vgs | ±20V | ±20V | ±30V | ±30V |
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