IRFP4004PBF, HEXFET series, N-Channel MOSFET, 40 V Vdss, 195 A continuous drain, 1.7 mOhm Rds(on) at 10 V, 330 nC gate charge, TO-247AC through-hole, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 380W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.7mOhm @ 195A, 10V |
| Gate charge (Qg) (Max) @ vgs | 330 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8920 pF @ 25 V |
The IRFP4004PBF: The 330 nC total gate charge at 10 V sets the gate drive current requirement for a given switching frequency.
With a maximum gate charge of 330 nC at 10 V and an input capacitance of 8920 pF at 25 V drain, the gate drive current requirement scales linearly with switching frequency.
Yes, the IRFP4004PBF is listed as ROHS3 compliant.