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Infineon Technologies IRFP4004PBF

IRFP4004PBF HEXFET N-Channel MOSFET, 40V 195A TO-247AC

MPNIRFP4004PBF
End of Life

IRFP4004PBF, HEXFET series, N-Channel MOSFET, 40 V Vdss, 195 A continuous drain, 1.7 mOhm Rds(on) at 10 V, 330 nC gate charge, TO-247AC through-hole, -55 to 175 °C.

$6.19Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFP4004PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation380W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.7mOhm @ 195A, 10V
Gate charge (Qg) (Max) @ vgs330 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8920 pF @ 25 V

Product details

1.7 mOhm Rds(on) at 10 V — conduction loss floor for a 40 V switch

The IRFP4004PBF: The 330 nC total gate charge at 10 V sets the gate drive current requirement for a given switching frequency.

175 °C junction — where this part lives

The operating junction temperature range spans -55 to 175 °C. The 380 W power dissipation rating at case temperature assumes an infinite heatsink.

Gate charge and input capacitance — sizing the driver

With a maximum gate charge of 330 nC at 10 V and an input capacitance of 8920 pF at 25 V drain, the gate drive current requirement scales linearly with switching frequency.

Frequently asked questions

Is IRFP4004PBF ROHS compliant?

Yes, the IRFP4004PBF is listed as ROHS3 compliant.