Infineon IRFP3006PBF N-Channel MOSFET, 60 V Vdss, 195 A Id, 2.5 mOhm Rds(on) at 170 A, 10 V, 300 nC Qg, TO-247-3 / TO-247AC, -55°C to 175°C, Tube.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 170A, 10V |
| Gate charge (Qg) (Max) @ vgs | 300 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8970 pF @ 50 V |
The IRFP3006PBF: ROHS3 compliant.
Total gate charge at 10 V is 300 nC. The 8970 pF input capacitance at 50 V Vds confirms the gate drive sees a substantial capacitive load.
The TO-247-3 package (supplier device package TO-247AC) is a through-hole mounting with a large metal tab for direct heatsink attachment.
The IRFP3006PBF is ROHS3 compliant, meaning it meets the current lead-free and restricted-substance requirements.