IRFP260MPBF, HEXFET® series, N-Channel MOSFET, 200 V Vdss, 50 A continuous drain, 40 mOhm Rds(on) at 28 A, 10 V, 234 nC gate charge, TO-247AC through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 28A, 10V |
| Gate charge (Qg) (Max) @ vgs | 234 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4057 pF @ 25 V |
Total gate charge is 234 nC at 10 V, which sets the gate-driver current requirement. Input capacitance Ciss is 4057 pF at 25 V drain-source.
The TO-247AC package has a large copper tab for heatsink mounting — the junction-to-case thermal resistance is low enough that a properly greased interface keeps the die below 175°C at 50 A continuous with adequate airflow or forced cooling.
Yes, the IRFP260MPBF is ROHS3 compliant.