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IRF7403TRPBF

IRF7403TRPBF Infineon N-Ch MOSFET 30V 8.5A SO-8

MPNIRF7403TRPBF
Active

Infineon Technologies HEXFET® N-Channel MOSFET, IRF7403TRPBF, 30V Vdss, 8.5A Id, 22mOhm Rds(on), 8-SOIC package, Tape & Reel.

$1.1100Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF7403TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.5A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs57 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Product details

SO-8 power switch for 30V rails

The IRF7403TRPBF: It comes in the industry-standard 8-SOIC package (0.154" wide, 3.90mm body width), which means the PCB footprint matches countless existing layouts for low-to-medium power switching. With a maximum Rds(on) of 22 milliohms at 4A with 10V gate drive, the conduction loss at rated current stays under 1.6W — within the 2.5W power dissipation limit at 25°C ambient. The 57 nC total gate charge at 10V tells the drive circuit what it needs to push into the gate each cycle; at 100 kHz switching, that's 5.7 mA average gate drive current, easily handled by a standard gate driver IC.

Switching performance and thermal budget

Input capacitance Ciss is 1200 pF at 25V Vds — this sets the Miller plateau charge time and therefore the switching losses. The 4.5V minimum drive voltage means it can be turned on from a 5V logic rail, though the 10V drive yields the lowest on-resistance. Gate threshold voltage is 1V max at 250µA, so the device is fully enhanced well before the gate reaches 4.5V. The operating junction temperature range spans -55°C to 150°C, covering industrial and some automotive under-hood environments. The 2.5W power dissipation at 25°C ambient is specified for the SO-8 on a standard FR4 board — real thermal performance depends on copper area on the drain pads. For continuous 8.5A operation, the PCB must sink the heat; a layout with thermal vias under the SO-8 body is recommended.

Active production, ROHS3 compliant

The base product number is IRF7403, and the TRPBF suffix indicates tape-and-reel packaging with lead-free (RoHS) plating.