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Infineon Technologies IRF6668TRPBF

IRF6668TRPBF - Infineon Technologies

MPNIRF6668TRPBF
End of Life

MOSFET N-CH 80V 55A DIRECTFET MZ

$1.95Ref. price · indicative, final on quote
PackagingDirectFET™ Isometric MZ
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF6668TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C55A (Tc)
Power dissipation2.8W (Ta), 89W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric MZ
Vgs(th) (Max) @ id4.9V @ 100µA
Rds on (Max) @ id, vgs15mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1320 pF @ 25 V