Gate-drive parametrics for the switching stage
The IR2011PBF: Delivers 1A peak source and 1A peak sink current — enough to charge and discharge the gate capacitance of a medium-power N-channel MOSFET within the 35ns rise / 20ns fall typical window. The bootstrap supply supports a high-side voltage up to 200 V, making this driver suitable for half-bridge and full-bridge topologies in motor drives, DC-DC converters, and class-D audio amplifiers. Supply voltage range of 10 V to 20 V gives headroom for standard 12 V and 15 V gate-drive rails found in industrial power stages.
Logic interface and temperature grade
The inverting input type means the output follows the inverse of the input pin; the driver turns the external MOSFET on when the input goes low.
Package and board-fit: 8-DIP through-hole
Housed in an 8-pin DIP (0.300" row spacing, 7.62 mm body width) — the through-hole footprint suits prototyping, high-vibration environments where socketed or soldered retention is preferred, and legacy PCB designs that avoid SMT. The two independent driver channels share a common ground; each channel drives a separate external MOSFET in a high-side or low-side configuration.