Infineon CoolMOS™ P7 series, N-Channel MOSFET, 800 V Drain-Source Voltage, 13 A Continuous Drain Current (Tc=25°C), 360 mOhm Rds(on) @ 5.6 A, 10 V, Through Hole, TO-220-3 Full Pack, -55°C to 150°C Junction Temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 280µA |
| Rds on (Max) @ id, vgs | 360mOhm @ 5.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 930 pF @ 500 V |
The IPAN80R360P7XKSA1 is an 800 V N-Channel MOSFET in the TO-220 Full Pack package.
Input capacitance is 930 pF at 500 V drain-source.
The base product number is IPAN80.
The PG-TO220-FP (Full Pack) package is a through-hole, fully moulded isolation package. The mounting hole pattern is the standard TO-220 footprint, so it drops into existing layouts.
Lead time is quoted per order and depends on quantity and sourcing channel. An RFQ will return the best available lead time from our supply network.
The CoolMOS P7 series is manufactured RoHS-compliant. The part number does not carry a lead-bearing suffix, consistent with Infineon's standard RoHS-compliant offering.
Continuous drain current is rated 13 A at 25°C case temperature.