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Infineon Technologies IPAN70R900P7SXKSA1 — Discrete Semiconductors

Infineon IPAN70R900P7SXKSA1 N-Channel MOSFET

MPNIPAN70R900P7SXKSA1
Active

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 700 V drain-to-source voltage, 6 A continuous drain current, 900 mOhm on-resistance at 10 V, TO-220 Full Pack through-hole package, -40°C to 150°C junction temperature.

$1.2100Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPAN70R900P7SXKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation17.9W (Tc)
Operating temperature-40°C~150°C(TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 60µA
Rds on (Max) @ id, vgs900mOhm @ 1.1A, 10V
Gate charge (Qg) (Max) @ vgs6.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds211 pF @ 400 V

Product details

The IPAN70R900P7SXKSA1: The 700 V Vdss rating provides headroom over a typical 400 VDC bus in PFC stages. The 900 mOhm Rds(on) at 10 V gate drive and 6.8 nC gate charge at 10 V keep gate-drive losses low in fast-switching applications.

The TO-220 Full Pack (PG-TO220-FP) is a through-hole package with a fully molded, isolated backside. No mica washer or sil-pad is needed between the tab and the heatsink, which cuts assembly time and eliminates one thermal interface. The three leads are standard TO-220 spacing; verify the existing PCB footprint matches the PG-TO220-FP pinout before committing the layout.

The IPAN70R900P7SXKSA1 is an active product with ROHS3 compliance. The CoolMOS™ P7 series is Infineon's current-generation high-voltage MOSFET platform. The base product number is IPAN70.

Frequently asked questions

Is IPAN70R900P7SXKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.