The 600 V Vdss gives a comfortable voltage margin for 230 VAC off-line rectified rails (typically 380 VDC) and for 400 VDC bus architectures. The 28 W maximum power dissipation in the TO-220 Full Pack is roughly half what a standard TO-220 can handle—the plastic full-pack body is the thermal bottleneck, so a heatsink is needed above a few watts of continuous dissipation.
Infineon IPAN60R650CEXKSA1 CoolMOS N-Channel MOSFET, 600V
MPNIPAN60R650CEXKSA1
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Infineon CoolMOS™ IPAN60R650CEXKSA1, N-Channel Super Junction MOSFET, 600V Vdss, 9.9A Id, 650mOhm Rds(on) at 10V, 20.5nC Qg, PG-TO220-FP, -40°C to 150°C.
$0.8867Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9.9A (Tc) |
| Power dissipation | 28W (Tc) |
| Operating temperature | -40°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Super Junction |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 200µA |
| Rds on (Max) @ id, vgs | 650mOhm @ 2.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 440 pF @ 100 V |
Product details
Frequently asked questions
Does IPAN60R650CEXKSA1 require a heat sink?
Yes, for any continuous operation above a few watts of dissipation. The TO-220 Full Pack package has a maximum power rating of 28 W at case temperature, but the plastic body limits heat transfer—a heatsink is needed to keep junction temperature below 150°C under load.