The IPAN60R600P7SXKSA1: The 650 V Vdss gives headroom for universal-input offline converters where the DC bus peaks near 400 V; the 600 mOhm Rds(on) at 10 V gate drive keeps conduction losses manageable at the rated 6 A.
Infineon IPAN60R600P7SXKSA1 CoolMOS™ P7 N-Ch MOSFET, 650V
MPNIPAN60R600P7SXKSA1
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Infineon CoolMOS™ P7 series, N-Channel MOSFET, 650 V Drain to Source Voltage, 6 A Continuous Drain Current, 600 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -40°C to 150°C TJ.
$1.3300Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 21W (Tc) |
| Operating temperature | -40°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 80µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 1.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 363 pF @ 400 V |
Product details
Frequently asked questions
What is the Rds(on) of IPAN60R600P7SXKSA1 at 10V Vgs?
The maximum on-resistance is 600 mOhm at 1.7 A drain current with 10 V gate drive.
Is IPAN60R600P7SXKSA1 RoHS compliant?
Yes, it is ROHS3 compliant.