Skip to main content
Log in
Infineon Technologies IPAN60R360P7SXKSA1 — Discrete Semiconductors

Infineon IPAN60R360P7SXKSA1 CoolMOS P7 N-Ch MOSFET

MPNIPAN60R360P7SXKSA1
Active

Infineon CoolMOS™ P7 N-Channel MOSFET, IPAN60R360P7SXKSA1, 650 V Vdss, 9 A Id, 360 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -40 to 150 °C.

$1.6000Ref. price · indicative, final on quote
Infineon Technologies IPAN60R360P7SXKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPAN60R360P7SXKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation22W (Tc)
Operating temperature-40°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 140µA
Rds on (Max) @ id, vgs360mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds555 pF @ 400 V

Product details

Conduction loss anchor for a 650 V class

The TO-220 Full Pack package — fully isolated — saves the insulating pad and washer, which simplifies the assembly step and cuts the thermal interface to one layer.

The input capacitance of 555 pF at 400 V drain bias is low enough that the gate-drive loop can be laid out without heroic measures.

Thermal headroom in a Full Pack

Maximum power dissipation is 22 W at the case. The PG-TO220 Full Pack package — the plastic body isolates the backside tab — so the heatsink does not need a separate insulator, which improves thermal resistance from junction to sink.

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IPAN60R360P7SXKSA1?

That is the value to use for worst-case conduction loss calculations in a 650 V class design.

Is IPAN60R360P7SXKSA1 RoHS compliant?

Yes — it is rated ROHS3 Compliant.