The Infineon IPAN60R280PFD7SXKSA1 is an OptiMOS N-channel power MOSFET rated for 600 V drain-source breakdown and 12 A continuous drain current at a 25°C case temperature. This combination targets offline flyback converters, PFC stages, and auxiliary power supplies operating from a 400 V DC-link bus.
Total gate charge is 15.3 nC at 10 V, with an input capacitance of 656 pF measured at 400 V drain-source. These figures place the switching loss well below that of older-generation 600 V planar MOSFETs. The low Qg also lets a smaller, cheaper gate-driver IC handle the turn-on edge without excessive cross-conduction.
Full-pack package — no isolation hardware needed
The PG-TO220-FP (full-pack) case is a fully moulded, isolated TO-220 variant. The metal tab is encapsulated, so the MOSFET can be bolted directly to a grounded heatsink without a silicone pad or mica washer. This saves one assembly step and eliminates the thermal resistance of the interface material.
Temperature range and application environment
The 4.5 V maximum gate threshold at 180 µA drain current means the device will not fully enhance with a 3.3 V logic-level gate signal — a 10 V gate drive rail is expected for the rated Rds(on).