CoolMOS PFD7 650V N-channel — what the headline ratings mean for the BOM
The IPAN60R125PFD7SXKSA1: The 650 V Vdss gives safe operating margin on a 400 V DC bus — typical for a PFC boost stage or flyback primary clamp — without derating into the avalanche region during a load dump. The TO-220 Full Pack (PG-TO220-FP) isolates the tab electrically, so no insulating pad is needed — the backside is the drain, but the plastic envelope keeps the tab at case potential, simplifying mounting on a shared heatsink.
Gate charge and switching-speed trade-off
Total gate charge Qg is 36 nC at 10 V — a moderate figure that keeps the gate-driver current requirement manageable: driving this at 100 kHz switching frequency draws roughly 3.6 mA from the driver, well within the SOA of a standard 1 A totem-pole gate driver. The input capacitance Ciss is 1503 pF at 400 V drain-source, which sets the Miller plateau width and the turn-on/turn-off delay; a 10 Ω gate resistor gives a ~15 ns RC time constant, fast enough for hard-switching topologies without excessive ringing.
Package and mounting — through-hole with isolated tab
Through-hole TO-220 Full Pack (PG-TO220-FP) — the three leads are standard 0.100-inch pitch, and the fully molded body means the mounting hole does not carry drain potential. No mica washer or sil-pad is required when bolting to a chassis or heatsink, which saves assembly time and eliminates one thermal interface.
Temperature grade and operating envelope
Rated for junction temperature from -40 °C to 150 °C — the full industrial temperature band. The 150 °C Tj max means the device can run at elevated ambient in a sealed enclosure, but the 25 A continuous drain current is only spec'd at 25 °C case; derate above that per the datasheet's power derating curve. At 100 °C case, the maximum dissipation drops to roughly 20 W, which limits the usable continuous current to about 12–15 A depending on duty cycle.