Infineon CoolMOS™ P7 series, N-Channel MOSFET, 700 V drain-source, 12.5 A continuous drain at 25°C, 360 mOhm Rds(on) at 3 A and 10 V gate drive, 16.4 nC gate charge, TO-220-3 Full Pack through-hole package.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 700 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12.5A (Tc) |
| Power dissipation | 26.4W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 150µA |
| Rds on (Max) @ id, vgs | 360mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 517 pF @ 400 V |
The through-hole TO-220 Full Pack mounts into a standard 3-pin footprint and the full-pack isolation means the metal tab can be bolted directly to a grounded heatsink without a mica or silicone pad — simplifies assembly and improves thermal transfer.
For volume pricing and current lead time, submit an RFQ.
The power dissipation rating of 26.4 W at the case implies a junction-to-case thermal resistance of roughly 4.7 °C/W, typical for a TO-220 Full Pack package. For exact values, refer to the datasheet.