Cypress F-RAM™ FM25V20A-PG, 2Mbit (256K x 8) Ferroelectric RAM, SPI interface, 40 MHz clock, 2V-3.6V supply, -40°C to 85°C, 8-PDIP package, Tube.
| Parameter | Value |
|---|---|
| Series | F-RAM™ |
| Memory type | Non-Volatile |
| Mounting | Through Hole |
| Supply voltage | 2V ~ 3.6V |
| Clock frequency | 40 MHz |
| Memory interface | SPI |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tube |
| Technology | FRAM (Ferroelectric RAM) |
| Memory size | 2Mbit |
| Memory format | FRAM |
| Case | 8-DIP (0.300\", 7.62mm) |
| Memory organization | 256K x 8 |
The Cypress FM25V20A-PG is a 2 Mbit Ferroelectric RAM (F-RAM™) memory device organized as 256K x 8 bits, communicating over an SPI bus at up to 40 MHz. The 2V to 3.6V supply range lets it operate in both 3.3V and 1.8V logic domains without an extra regulator.
The FM25V20A-PG is the same base product (FM25V20) in the 8-pin PDIP package variant. The suffix -PG denotes the through-hole PDIP option. If your existing design uses the FM25V20A in a PDIP footprint, the -PG suffix is the correct ordering code for that package — verify the package code on your BOM matches 8-PDIP.
No external charge pump or write-enable sequencing is needed. FRAM writes at the SPI bus speed directly, so the standard SPI bus signals (SCK, MOSI, MISO, CS) plus supply decoupling are all that is required. A 0.1 µF ceramic close to the supply pin is the usual recommendation.
Yes, in most cases. The FM25V20A-PG uses the same SPI interface and pinout as a standard serial EEPROM, but writes at bus speed with no write-cycle delay and offers essentially unlimited endurance (10^14 read/write cycles) versus EEPROM's typical 1 million cycles. The trade-off is a slightly higher standby current than some EEPROMs, so check the quiescent budget for battery-powered designs.