1Mbit FRAM with 40 MHz SPI — no erase-before-write penalty
The FM25V10-GTR stores 1Mbit in a ferroelectric array that writes at bus speed without a preceding erase cycle — unlike serial flash, where a sector erase adds 10-100 ms before every write. For data-logging applications that write small packets frequently, this eliminates the write-time jitter and firmware overhead of erase management. The SPI interface runs at 40 MHz, delivering a sustained read throughput of 40 Mbit/s in quad-I/O mode. The 128K x 8 organization maps directly to byte-addressable data structures — no page-size alignment required.
Supply voltage and temperature — single-rail flexibility
At 3.3V the SPI input thresholds are 5V-tolerant on most Cypress FRAM parts — confirm the absolute maximum rating in the datasheet before mixing 5V logic. The 8-SOIC package (3.90 mm width) is a standard reflow footprint shared by EEPROM and serial flash, so a single PCB land pattern serves multiple memory types.
Active lifecycle and compliance status
ROHS3 compliance means no restricted-substance exemptions that could trigger a redesign for EU markets. The tape-and-reel package suits automated pick-and-place lines. The tube-packaged sibling FM25VN10-G uses the same die and footprint — qualify it as a second source for the same BOM line if reel quantities are not required.