1 Mbit SPI FRAM — instant writes, no battery
The Infineon FM25V10-G is a 1 Mbit non-volatile FRAM (Ferroelectric RAM) memory organized as 128K x 8 bits, communicating over an SPI bus at up to 40 MHz.
40 MHz SPI — bus timing and throughput
The 40 MHz SPI clock rate delivers a sustained read/write throughput of roughly 5 Mbytes/s in quad-SPI mode (the FM25V10-G uses standard SPI, not quad). For a 128 KB memory array, a full-chip read completes in about 26 ms. This speed, combined with zero write-cycle overhead, means the part can log sensor data at microsecond intervals without missing samples — something a 1 Mbit EEPROM at 10 MHz cannot do because of its 5 ms page-write time.
The 2V to 3.6V supply range lets it run from a single Li-ion cell (3.0V–4.2V) or a regulated 3.3V rail with 300 mV of headroom for brownout. At the low end, 2V operation is useful for energy-harvesting or coin-cell-backed designs where every millivolt matters.
The part ships in Tube form; the reeled variant (if needed for automated pick-and-place) is ordered under a different suffix.
It is ROHS3 compliant. For designs that require a lower minimum supply voltage, the FM25VN10-G is a pin-compatible sibling rated down to 2.0V. For double the density at the same speed and package, the FM25V20A-DG (2 Mbit) is a direct footprint upgrade.