FM24CL16B-G

Infineon Technologies · F-RAM™ Series

Infineon (formerly Cypress) F-RAM™ FM24CL16B-G, 16Kbit Ferroelectric RAM, I²C 1 MHz, 550 ns access, 2.7V–3.6V, -40°C to 85°C, 8-SOIC.

Infineon Technologies FM24CL16B-G
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Technical specifications

FM24CL16B-G specifications
Parameter / AttributeSpecification / Value
SeriesF-RAM™
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency1 MHz
Memory interfaceI²C
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologyFRAM (Ferroelectric RAM)
Access time550 ns
Memory size16Kbit
Memory formatFRAM
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization2K x 8

Technical details

What this FRAM replaces on your board

The FM24CL16B-G is a 16Kbit non-volatile memory from Infineon's F-RAM™ family, using ferroelectric storage instead of floating-gate cells. It talks I²C at up to 1 MHz and lives in a standard 8-SOIC footprint. The key difference from a serial EEPROM: no write-cycle limit. You can write to any address 10^14 times before the cell wears out, which makes it the part you pick when the system logs data every few seconds over a ten-year service life.

The 550 ns access time looks slow compared to a parallel SRAM, but this is a serial I²C part. The bus runs at 1 MHz, so each bit takes 1 µs; the access time is the internal fetch latency, not the bus cycle. If you are replacing a 24LCxx EEPROM running at 400 kHz, the FM24CL16B-G will feel faster because it does not need a page-write delay or a polling loop. The write completes in the same bus cycle as the data transfer — no 5 ms wait.

Supply and temperature — fits industrial and 3.3V logic

The I²C interface is 3.3 V logic compatible.

FM24CL16B-G
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