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Infineon Technologies FM24CL04B-G — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon FM24CL04B-G FRAM, 4Kbit I²C 1MHz 8-SOIC

MPNFM24CL04B-G
Active

Infineon Technologies F-RAM™ series, FRAM (Ferroelectric RAM), 4Kbit, I²C, 1 MHz, 2.7-3.6 V, 8-SOIC, Tube.

$2.0100Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesF-RAM™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

FM24CL04B-G specifications
ParameterValue
SeriesF-RAM™
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency1 MHz
Memory interfaceI²C
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologyFRAM (Ferroelectric RAM)
Access time550 ns
Memory size4Kbit
Memory formatFRAM
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization512 x 8

Product details

8-SOIC footprint and board integration

The FM24CL04B-G is supplied in an 8-SOIC package (0.154-inch body width, 3.90 mm) with a surface-mount footprint that matches industry-standard SOIC-8 land patterns — no special pad geometry or thermal-via array required for this 4Kbit FRAM. Supply voltage spans 2.7 V to 3.6 V, so the part sits comfortably on a 3.3 V rail without an external regulator; the I²C interface runs at 1 MHz clock frequency, compatible with most MCU I²C peripherals.

Parametric profile for the BOM line

Organised as 512 x 8 bits, the FM24CL04B-G delivers 4Kbit of non-volatile FRAM with a 550 ns access time — write cycles consume no erase time, unlike EEPROM, so the effective write throughput at 1 MHz I²C is limited only by the bus protocol overhead. Rated for -40°C to +85°C ambient, the device covers industrial temperature range; the FRAM cell retains data without a backup battery, eliminating the battery holder and monitoring circuit from the BOM.

Lifecycle and compliance posture

Sourced through independent distribution channels; availability and current pricing are confirmed at RFQ against the BOM quantity.