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Infineon Technologies CY7C4122KV13-106FCXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C4122KV13-106FCXC QDR IV SRAM, 144 Mbit, 1.066 GHz

MPNCY7C4122KV13-106FCXC
End of Life

Infineon CY7C4122KV13-106FCXC, QDR IV synchronous SRAM, 144 Mbit (8M x 18), 1.066 GHz clock, parallel interface, 1.26–1.34 V supply, 361-FCBGA (21x21), 0°C to 70°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C4122KV13-106FCXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.26V ~ 1.34V
Clock frequency1.066 GHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR IV
Memory size144Mbit
Memory formatSRAM
Case361-BBGA, FCBGA
Memory organization8M x 18

Product details

The 1.066 GHz clock enables back-to-back read-write throughput with no dead cycles. This clock rate sets the timing closure budget for the FPGA or ASIC controller.

Voltage supply and temperature constraints

The supply range is 1.26 V to 1.34 V. This demands a dedicated low-noise regulator.

Frequently asked questions

What is the clock speed of CY7C4122KV13-106FCXC?

The clock frequency is 1.066 GHz.

What is the package type for CY7C4122KV13-106FCXC?

It comes in a 361-BBGA, FCBGA package (361-FCBGA, 21x21 mm body).

What is the voltage supply range for CY7C4122KV13-106FCXC?

The supply range is 1.26 V to 1.34 V.

What is the equivalent or replacement for CY7C4122KV13-106FCXC?

No official replacement or pin-compatible second source is listed in the record. For a BOM line requiring this exact density and speed grade, the sourcing path is surplus stock through independent distribution.