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Infineon Technologies CY7C4121KV13-633FCXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C4121KV13-633FCXI QDR IV SRAM, 633 MHz

MPNCY7C4121KV13-633FCXI
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Infineon CY7C4121KV13-633FCXI, 144Mbit synchronous QDR IV SRAM, 8M×18 organization, 633 MHz clock, 1.26V–1.34V supply, 361-FCBGA (21x21 mm), -40°C–85°C, tray.

$229.3408Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C4121KV13-633FCXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.26V ~ 1.34V
Clock frequency633 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR IV
Memory size144Mbit
Memory formatSRAM
Case361-BBGA, FCBGA
Memory organization8M x 18

Product details

633 MHz QDR IV SRAM for high-throughput line cards

The Infineon CY7C4121KV13-633FCXI is a 144 Mbit synchronous QDR IV SRAM organized as 8M × 18 bits, clocked at 633 MHz over a parallel interface. Supply range is 1.26 V to 1.34 V. The 361-ball FCBGA (21 × 21 mm) requires a multi-layer PCB with controlled impedance for the 633 MHz traces.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C4121KV13-633FCXI?

Infineon does not list a direct pin-compatible second source for this part. Within the CY7C4121 family, density variants (72 Mbit or 288 Mbit) share the same footprint but differ in depth; verify your memory organization before substituting.

What is CY7C4121KV13-633FCXI's listed package?

The part ships in tray packaging and is supplied in a 361-ball FCBGA (21 × 21 mm) package for surface-mount assembly.