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Infineon Technologies CY7C4022KV13-106FCXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C4022KV13-106FCXC Infineon 72 Mbit QDR IV SRAM – 1.066

MPNCY7C4022KV13-106FCXC
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Infineon CY7C4022KV13-106FCXC, QDR IV synchronous SRAM, 72 Mbit organized as 4M x 18, 1.066 GHz clock frequency, parallel interface, 1.26V–1.34V supply, 361-FCBGA (21x21 mm), commercial temperature 0°C to 70°C.

$324.1175Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C4022KV13-106FCXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.26V ~ 1.34V
Clock frequency1.066 GHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR IV
Memory size72Mbit
Memory formatSRAM
Case361-BBGA, FCBGA
Memory organization4M x 18

Product details

That clock rate is the headline: it delivers the read-write bandwidth needed in high-performance networking gear, packet processors, and compute accelerators where every nanosecond of memory access latency matters. The memory is organized as 4M x 18 bits, accessed through a parallel interface, and operates from a 1.26V to 1.34V supply rail. QDR IV stands for Quad Data Rate, fourth generation — it transfers four words per clock cycle (two reads and two writes), effectively quadrupling the data throughput compared to a single-data-rate SRAM at the same clock.

Package and temperature – board-level fit

The 1.26V–1.34V supply is a narrow window — the board's voltage regulator must be accurate to within ±40 mV to stay inside the spec.

Frequently asked questions

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