Infineon CY7C2663KV18-550BZXC, Synchronous QDR II+ SRAM, 144Mbit, 8M x 18 organization, 550 MHz clock, Parallel interface, 1.7V supply, 165-FBGA (15x17), Tray, 0°C to 70°C.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 550 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory size | 144Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 8M x 18 |
The Infineon CY7C2663KV18-550BZXC is a 144Mbit synchronous QDR II+ SRAM organized 8M x 18, clocked at 550 MHz over a parallel interface. The 1.7 V to 1.9 V supply range and 165-FBGA package suit dense PCB layouts with controlled impedance traces.
It is not specified for industrial enclosures, outdoor cabinets, or automotive under-hood use. If the application requires -40°C to 85°C operation, the CY7C2663KV18-450BZI covers the same density and organization at 450 MHz.
Yes, both parts share the same 144Mbit density, 8M x 18 organization, 1.7 V supply, and 165-FBGA footprint. The 550BZXC runs at 550 MHz instead of 450 MHz and is limited to 0°C to 70°C commercial temperature, while the 450BZI covers -40°C to 85°C. No rewiring or layout change is needed.