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Infineon Technologies CY7C2644KV18-333BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C2644KV18-333BZXI 144Mbit QDR II+ SRAM, 333 MHz

MPNCY7C2644KV18-333BZXI
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Cypress CY7C2644KV18-333BZXI, QDR II+ synchronous SRAM, 144 Mbit (4M x 36), 333 MHz clock, 1.7–1.9 V supply, -40 to 85 °C, 165-LBGA, Tray.

$502.7000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C2644KV18-333BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency333 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 36

Product details

The Cypress CY7C2644KV18-333BZXI is a 144 Mbit synchronous SRAM organised as 4M x 36, clocked at 333 MHz over a parallel QDR II+ interface. This is a high-bandwidth memory part designed for applications that cannot tolerate DRAM refresh latency — think network packet buffers, test instrumentation capture memory, and high-end FPGA co-processing where every clock cycle of deterministic access matters.

The 165-ball LBGA (15 x 17 mm footprint) demands a multi-layer PCB with controlled impedance traces for the 333 MHz clock and data lines. Verify your layout against the Cypress application note for QDR II+ signal integrity — stub lengths and via placement matter at this speed.

Lifecycle reality — EOL hot

Frequently asked questions

What is CY7C2644KV18-333BZXI's listed package on this component line?

The CY7C2644KV18-333BZXI is listed in a 165-LBGA (165-FBGA, 15×17 mm body) package, supplied in tray.

What technology does the CY7C2644KV18-333BZXI use — SRAM, DRAM, or something else?

The device is a synchronous SRAM using QDR II+ technology — the II+ variant adds a separate write clock that removes the bus-turnaround dead cycle, giving it full-duplex operation on a parallel interface. It is a volatile memory organized as 4M × 36.