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Infineon Technologies CY7C2563KV18-400BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C2563KV18-400BZC QDR II+ SRAM, 72Mbit 400 MHz

MPNCY7C2563KV18-400BZC
Obsolete

Cypress CY7C2563KV18-400BZC, QDR II+ synchronous SRAM, 72Mbit (4M x 18), 400 MHz clock, parallel interface, 1.7V–1.9V supply, 165-FBGA (13x15 mm), 0°C to 70°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C2563KV18-400BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency400 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

The QDR II+ architecture separates read and write ports, delivering back-to-back throughput without bus-turnaround penalties.

This limits deployment to indoor, climate-controlled environments: central offices, data centers, lab instrumentation. Not rated for industrial enclosures or outdoor telecom cabinets without active cooling or extended-temperature qualification.

Frequently asked questions

What is the package type for CY7C2563KV18-400BZC?

The part is supplied in a 165-ball LBGA (165-FBGA, 13x15 mm body) on Tray.

What is the technology of CY7C2563KV18-400BZC?

It is a synchronous QDR II+ SRAM — a volatile memory with separate read and write ports for high-throughput, no-bus-turnaround operation.