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Infineon Technologies CY7C25632KV18-500BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C25632KV18-500BZXC 72Mbit QDR II+ SRAM, 500 MHz

MPNCY7C25632KV18-500BZXC
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Infineon CY7C25632KV18-500BZXC, synchronous QDR II+ SRAM, 72 Mbit (4M x 18), 500 MHz clock, parallel interface, 1.7 V to 1.9 V supply, 165-FBGA (13x15), 0°C to 70°C commercial temperature.

$369.2675Ref. price · indicative, final on quote
Infineon Technologies CY7C25632KV18-500BZXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C25632KV18-500BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency500 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

It clocks at 500 MHz on the parallel interface, delivering back-to-back read and write transactions without bus-turnaround dead cycles — the defining advantage of the QDR II+ family for high-throughput buffer applications in networking, telecom line cards, and test equipment. Supply range is 1.7 V to 1.9 V, and the part is housed in a 165-ball FBGA (13x15 mm footprint).

The 500 MHz clock rate on this QDR II+ device enables double-data-rate transfers on both read and write ports.

This part carries an end-of-life (hot) lifecycle stage.