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Infineon Technologies CY7C2265KV18-550BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C2265KV18-550BZXI Infineon SRAM, 36Mbit, 550 MHz

MPNCY7C2265KV18-550BZXI
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Infineon Technologies CY7C2265KV18-550BZXI SRAM - Synchronous, QDR II+, 36Mbit (1M x 36), 550 MHz, 1.7V ~ 1.9V, -40°C ~ 85°C, 165-LBGA, Tray.

$45.0000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C2265KV18-550BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency550 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

Active production — BOM-fit note

The CY7C2265KV18-550BZXI is an active-production Infineon QDR II+ synchronous SRAM, 36 Mbit organized as 1M x 36, clocked at 550 MHz. The 1.7 V to 1.9 V core supply and industrial temperature range (-40°C to 85°C) suit it for high-throughput networking and telecom line-card buffers where deterministic read-write latency matters.

Package and thermal integration

Housed in a 165-ball LBGA (13x15 mm FBGA footprint), the package is a fine-pitch BGA that demands a controlled impedance PCB stack-up and proper via-in-pad layout for the 550 MHz interface.

Sourced to order against an RFQ — pricing and lead time confirmed at quote.

Frequently asked questions

How do I get current pricing and availability for CY7C2265KV18-550BZXI?

Submit an RFQ through this listing.