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Infineon Technologies CY7C2265KV18-550BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C2265KV18-550BZXC 36Mbit QDR II+ SRAM, 550 MHz

MPNCY7C2265KV18-550BZXC
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Infineon CY7C2265KV18-550BZXC, 36Mbit QDR II+ synchronous SRAM, 1M x 36, 550 MHz clock, parallel interface, 1.7V–1.9V supply, 165-FBGA (13x15 mm), 0°C–70°C commercial temperature.

$131.9400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C2265KV18-550BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency550 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

The 550 MHz clock rate delivers back-to-back read and write operations on separate data ports, eliminating bus-turnaround dead cycles that standard SRAMs incur. That throughput matters for high-bandwidth packet buffers, network switch look-up tables, and cache memory in telecom line cards where every clock cycle counts.

Package and supply — board-fit constraints

Frequently asked questions

What is CY7C2265KV18-550BZXC's package and temperature grade?

It comes in a 165-ball FBGA (13x15 mm) and is rated for commercial temperature range of 0°C to 70°C.

What is the memory organization of this SRAM?

Organized as 1M x 36 bits, giving 36 Mbit total density with a 36-bit wide data bus for high-throughput parallel access.