Infineon CY7C2264XV18-450BZXC, QDR II+ synchronous SRAM, 36 Mbit (1M x 36), 450 MHz clock, 1.7V–1.9V supply, parallel interface, 165-ball FBGA (13x15 mm), commercial temperature 0°C to 70°C, tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 450 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C~70°C(TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory size | 36Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 1M x 36 |
The CY7C2264XV18-450BZXC: The 450 MHz clock rate delivers back-to-back read and write operations on separate ports with no dead cycles, which is the defining advantage of the QDR family over traditional synchronous SRAMs. This part is aimed at high-bandwidth applications such as network packet buffers, telecom line cards, and test equipment where sustained throughput and deterministic latency matter more than density.
The memory is organized as 1M x 36 bits, giving a total density of 36 Mbit. The 36-bit word width suits wide datapath applications like packet buffers or FIFOs.