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Infineon Technologies CY7C2263KV18-450BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C2263KV18-450BZXI Infineon 36Mbit QDR II+ SRAM, 450 MHz

MPNCY7C2263KV18-450BZXI
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Infineon CY7C2263KV18-450BZXI, 36Mbit synchronous QDR II+ SRAM, 2M×18 organization, 450 MHz clock, 1.7–1.9V supply, 165-LBGA tray, -40 to 85°C.

$90.2825Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C2263KV18-450BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency450 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

450 MHz QDR II+ SRAM for high-bandwidth buffer applications

It clocks at 450 MHz, delivering the read-write throughput needed for line-rate packet buffering, network switch look-up tables, and high-speed data acquisition systems where the bus must sustain back-to-back transactions without dead cycles. The QDR II+ interface separates read and write ports, eliminating the bus-turnaround penalty that conventional common-I/O SRAMs incur.

165-ball FBGA footprint, 13x15 mm body

Housed in a 165-ball FBGA (13x15 mm body), the package suits dense PCB layouts where signal routing between the SRAM and the host ASIC or FPGA must stay short to maintain signal integrity at 450 MHz. The surface-mount BGA requires standard reflow assembly;.

Frequently asked questions

What is the maximum clock frequency of CY7C2263KV18-450BZXI?

The device is rated for a 450 MHz clock frequency, which defines the peak data rate on the QDR II+ read and write ports.