Skip to main content
Infineon Technologies CY7C199D-10ZXIT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C199D-10ZXIT Infineon 256Kbit SRAM, 10ns, 28-TSSOP

MPNCY7C199D-10ZXIT
Obsolete

Infineon Technologies CY7C199D-10ZXIT asynchronous SRAM, 256Kbit, 32Kx8 parallel, 10ns access, 4.5V-5.5V, 28-TSSOP, -40°C to 85°C, Tape & Reel.

$8.3340Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C199D-10ZXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size256Kbit
Memory formatSRAM
Case28-TSSOP (0.465\", 11.80mm Width)
Memory organization32K x 8
Write cycle time - word, page10ns

Product details

The CY7C199D-10ZXIT is classified as Obsolete by Infineon Technologies. This part is sourced through independent distribution channels.

32K x 8 asynchronous SRAM — 10 ns access

Organized as 32K words by 8 bits, the CY7C199D-10ZXIT provides 256 Kbit of volatile storage with a parallel interface. The 10 ns access time means the memory delivers data within 10 ns of the address being presented — this sets the read-cycle ceiling for the bus master.

Supplied in a 28-TSSOP package (0.465 inch body width, 11.80 mm), the supplier device package is designated 28-TSOP I. Tape & Reel packaging (TR suffix) indicates the part ships on a reel suitable for automated pick-and-place assembly.

Frequently asked questions

What is the access time of CY7C199D-10ZXIT?

The access time is 10 ns. This is the maximum time from address valid to data valid on the bus, and it matches the write cycle time of 10 ns for word and page operations.