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Infineon Technologies CY7C199C-15PXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C199C-15PXC SRAM, 256Kbit, 15ns, 28-DIP

MPNCY7C199C-15PXC
Obsolete

Infineon Technologies CY7C199C-15PXC asynchronous SRAM, 256Kbit (32K x 8), 15 ns access time, 4.5 V to 5.5 V supply, through-hole 28-DIP (0.300", 7.62 mm), commercial temperature 0 °C to 70 °C.

Infineon Technologies CY7C199C-15PXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C199C-15PXC specifications
ParameterValue
Memory typeVolatile
MountingThrough Hole
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time15 ns
Memory size256Kbit
Memory formatSRAM
Case28-DIP (0.300\", 7.62mm)
Memory organization32K x 8
Write cycle time - word, page15ns

Product details

Legacy 5 V bus SRAM — 15 ns read cycle

The CY7C199C-15PXC: The 15 ns write cycle time (word/page mode) matches the read access — no penalty for mixed read/write sequences at the same bus speed.

28-pin DIP — socketed or wave-solder legacy boards

Housed in a 28-pin PDIP (0.300 inch body width, 7.62 mm), the through-hole footprint is compatible with legacy sockets or wave-solder assembly — no reflow profile required. The commercial temperature grade (0 °C to 70 °C) limits deployment to indoor, temperature-controlled equipment — not suitable for industrial or automotive ambient without active cooling.