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Infineon Technologies CY7C1911KV18-300BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1911KV18-300BZXC QDR II SRAM, 18 Mbit, 300 MHz, 165-FBGA

MPNCY7C1911KV18-300BZXC
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Infineon CY7C1911KV18-300BZXC, QDR II synchronous SRAM, 18 Mbit (2M x 9), 300 MHz clock, parallel interface, 1.7 V–1.9 V supply, 0°C–70°C, 165-FBGA (13x15 mm), Tray.

$30.8500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1911KV18-300BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency300 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 9

Product details

300 MHz QDR II SRAM — 18 Mbit in a 165-ball FBGA

It operates at a 300 MHz clock frequency, delivering back-to-back read and write transactions on every clock edge without dead cycles — the defining advantage of the QDR II bus for high-throughput buffer applications. Typical deployment targets include network line cards, telecom switch fabrics, and high-speed data acquisition systems where deterministic latency and sustained bandwidth are required.

At 300 MHz, the QDR II architecture allows independent read and write ports to operate simultaneously, effectively doubling the data bandwidth compared to a common-I/O SRAM at the same clock rate. For a 9-bit-wide device, the peak data rate is 600 MB/s (300 MHz x 2 transfers per clock x 9 bits). The 165-FBGA package requires a controlled-impedance PCB stackup and matched trace lengths for the address, data, and control buses — a four-layer board with a dedicated ground plane is the practical minimum.

Frequently asked questions

Is CY7C1911KV18-300BZXC compatible with 1.8V QDR II systems?

Yes. The device is a synchronous QDR II SRAM and is designed to interface directly with QDR II controllers operating at the same voltage.