Infineon CY7C1663KV18-550BZXC, QDR II+ synchronous SRAM, 144Mbit (8M x 18), 550 MHz clock, parallel interface, 1.7V-1.9V supply, 165-FBGA (15x17 mm), 0°C to 70°C, tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 550 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory size | 144Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 8M x 18 |
Its 550 MHz clock rate delivers back-to-back read and write operations on separate data ports, eliminating bus-turnaround dead cycles that limit throughput in standard synchronous SRAM.
The CY7C1663KV18-550BZXC carries an end-of-life (EOL) status. Infineon has transitioned this density and speed grade to a last-time-buy phase.
The CY7C1663KV18-550BZXC is end-of-life (EOL). Infineon has moved this part to last-time-buy status, so new orders are fulfilled from remaining stock or surplus channel inventory. No direct successor order code is listed.
Yes, the QDR II+ architecture is backward-compatible with QDR II interfaces at the protocol level, but the 550 MHz clock rate is significantly faster than typical QDR II parts. Verify that the memory controller supports the higher frequency and the 1.7V-1.9V supply range before substituting.
QDR II+ doubles the data rate compared to QDR II by using a higher clock frequency and improved I/O timing. The CY7C1663KV18-550BZXC runs at 550 MHz, whereas typical QDR II parts top out around 250-333 MHz. Both use separate read and write ports, but QDR II+ tightens setup/hold windows for the faster edge rate.