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Infineon Technologies CY7C1663KV18-450BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1663KV18-450BZXC SRAM, 144Mbit, 450 MHz, QDR II+

MPNCY7C1663KV18-450BZXC
Obsolete

Infineon CY7C1663KV18-450BZXC, 144Mbit QDR II+ synchronous SRAM, 450 MHz clock, parallel interface, 1.7V–1.9V supply, 165-FBGA (15x17 mm), 0°C to 70°C operating temperature, tray packaging.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1663KV18-450BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency450 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 18

Product details

The Infineon CY7C1663KV18-450BZXC is a 144 Mbit synchronous SRAM organised as 8M x 18, built on QDR II+ architecture. The 450 MHz clock rate delivers back-to-back read and write operations without bus-turnaround dead cycles — critical for high-throughput packet buffers in network switches, telecom line cards, and high-end test equipment. The parallel interface runs on a 1.7 V to 1.9 V core supply, and the 165-ball FBGA (15x17 mm) footprint matches the standard QDR II+ pinout for this density tier.

This suits indoor equipment in controlled environments: server rooms, central offices, lab instrumentation. Store the reels dry; the FBGA package is moisture-sensitive and requires bake before reflow if the floor life is exceeded.

Frequently asked questions

What package does CY7C1663KV18-450BZXC use?

It comes in a 165-ball FBGA (15x17 mm) package, supplied in tray format.

What is the memory technology of CY7C1663KV18-450BZXC?

It is a synchronous SRAM using QDR II+ architecture, organised as 8M x 18 with a parallel interface.